Difference Between MOSFET, BJT, and IGBT | Losses, Speed, Efficiency

Hello guys, welcome back to my blog. In this article, I will discuss the difference between MOSFET, BJT, and IGBT, what is MOSFET, what is BJT, and what is IGBT,

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Difference Between MOSFET, BJT, and IGBT

Mosfet ( Metal oxide semiconductor field-effect transistors)

MOSFET stands for metal oxide semiconductor field-effect transistors. This is one of the types of field-effect transistors. The MOSFETs are very small that’s why this can be used to design VLSI Circuits with high density. MOSFET doesn’t contain a PN junction structure, instead of this, the gate of the MOSFET will be insulated by a silicon dioxide layer, Due to which the input resistance of MOSFET will be very high. MOSFET is also called IGFET because of the insulated gate terminal.

MOSFET carries the majority of charged particles. The switching frequency of the MOSFET will be too high. This MOSFET is suitable for low-power applications.

BJT (Bipolar junction transistor)

BJT stands for bipolar junction transistor. It can be also called a solid-state current control device that can be used to switch a circuit. BJT is a 3 terminal device that contains an emitter, collector, and base. The current which will be flowing through the emitter and collector is controlled by the current flowing through the base.

BJT is a PNP transistor, which means it has two P-type regions and one N-type region. Similarly, in the case of NPN, where it has 2 N-type regions and one P-region. This BJT can be connected in three various configurations. Those are CB configuration, CE configuration, and CC configuration.

IGBT (Insulated gate bipolar transistor)

It is a Fusion between BJT and MOSFET. IGBT stands for an insulated gate bipolar transistor. The IGBT Is a 3 terminal power semiconductor device that will be used as an electronic switch since it is a fast switching device. This contains 4 layers( P-N-P-N) which are controlled by a metal oxide semiconductor gate structure. It will be having high input impedance and low output impedance and the cost of IGBT will be high. IGBTs are most widely used in amplifiers for switching purposes.

Difference Between BJT, MOSFET, And IGBT

BJT

➢ The voltage rating is high but less than 1kv
➢ BJT is having low input impedance.
➢ Having a high output impedance.
➢ It’s having a slow switch speed.
➢ The cost of a BJT is low.
➢ It will be controlled by the base.
➢ It is a current controlled device.
➢ It is having a negative temperature coefficient.
➢ This BJT is will be suitable for high-power applications.
➢ In BJT losses are low.

MOSFET

➢ The voltage rating is high, but less than 1kv.
➢ MOSFET is having high input impedance.
➢ It is having medium output impedance.
➢ The switching speed is fast.
➢ The cost of a MOSFET is medium.
➢ It will be controlled by the gate.
➢ It is a voltage-controlled device.
➢ Having a positive temperature coefficient.
➢ MOSFET will be suitable for low-power applications.
➢ In MOSFET losses are high.

IGBT

➢ The voltage rating is very high which is greater than 1kv.
➢ IGBT is having high input impedance.
➢ Having low output impedance.
➢ The switching speed in IGBT is high.
➢ The cost of the IGBT is very high.
➢ It will be controlled by GATE.
➢ It is a voltage-controlled device.
➢ Has a negative temperature coefficient.
➢ Losses are less in IGBT.

I hope this article may help you all a lot. Thank you for reading.

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Chetan Shidling

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