In a n-channel MOSFET device in saturation, the depth of inversion layer is greater at?

All Questions › Category: VLSI CMOS › In a n-channel MOSFET device in saturation, the depth of inversion layer is greater at?
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Chetan Shidling Staff asked 5 years ago

Options:
 
a. Source
b. Gate
c. Drain
d. Equal at both source and drain