In a n-channel MOSFET device in saturation, the depth of inversion layer is greater at? All Questions › Category: VLSI CMOS › In a n-channel MOSFET device in saturation, the depth of inversion layer is greater at? -1 Vote Up Vote Down CS Electrical And Electronics Staff asked 4 years ago Options: a. Source b. Gate c. Drain d. Equal at both source and drain