Which one of the following is not the advantage of ion-implantation over diffusion doping? All Questions › Category: VLSI CMOS › Which one of the following is not the advantage of ion-implantation over diffusion doping? 1 Vote Up Vote Down Chetan Shidling Staff asked 5 years ago Options: It is a low-temperature process Shallow doping is possible Point imperfections are not produced Used to remove unwanted impurities