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Which one of the following is not the advantage of ion-implantation over diffusion doping?

All Questions › Category: VLSI CMOS › Which one of the following is not the advantage of ion-implantation over diffusion doping?
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CS Electrical And Electronics Staff asked 4 years ago

Options:

  1. It is a low-temperature process
  2. Shallow doping is possible
  3. Point imperfections are not produced
  4. Used to remove unwanted impurities