Difference Between Silicon Diode And Germanium Diode
Hello guys, welcome back to my blog. In this article, I will discuss what is silicon diode, what is germanium diode, the difference between silicon diode and germanium diode, etc.
If you need an article on some other topics then comment below in the comment box. You can also catch me @ Instagram – Chetan Shidling.
Also, read:
- Types Of Memories Used In Embedded System, Definition, Applications.
- Different Types Of Logic Gates, IC Numbers, Table, Diagram, Working.
- What Is A MATLAB, Applications, Alternatives, Advantages, Disadvantages
Silicon Diode And Germanium Diode
Introduction
Both Silicon and Germanium are used to make diodes. But they both differ in some aspects. Let’s study some fundamental differences between Silicon diode and Germanium diode.
What is Silicon diode?
Si diode is a semiconductor diode which is having positive and negative charge polarity and allows the current to flow in only one direction.
What is a Germanium diode?
Germanium diode also works similarly to Si diode, but the difference is Germanium has low forward voltage, which results in it being a low power loss and an efficient diode.
Differences between Si diode and Ge diode
01. Silicon transistor has threshold voltage of 0.7V, whereas Germanium has 0.3V.
02. Si diode is having good temperature stability about 200° Celsius, whereas ge is having temperature stability about 85°c.
03. Leakage current of Sili_con diode is in nA, whereas the leakage current for germanium is in mA.
04. PIV is more for Si diode, whereas the PIV is less for germanium diode.
05. Silicon diodes can work maximum up to 170°c, whereas germanium diodes can work maximum up to 100°c.
06. The reverse bias saturation current is higher i.e (1nA) in Silicon diode. Whereas for Germanium diode it is high (1000nA).
07. Si diodes are preferred as rectifiers, whereas Ge diodes are preferred as lighting sensors.
08. The forward break over voltage is high for silicon diodes, whereas it’s low for Ger-manium diode.
09. Silicon diode looses about 0.7-0.9V, whereas Ger-manium diode looses about 0.3-0.4V.
10. Si crystals are having capacity to withstand at higher temperature as compared to germanium crystals.
11. Silicon is cheaper than Germanium. Therefore, it’s preferred over Ge diode.
12. The forward voltage drop for Germanium junction is less, whereas for Silicon diode the forward voltage drop is low.
I hope this article may help you all a lot. Thank you for reading. If you have any doubts related to this article, then comment below in the comment box.
Also, read:
- 100 + Electrical Engineering Projects For Students, Engineers
- 1000+ Electronics Projects For Engineers, Diploma, MTech Students
- 1000+ MATLAB Simulink Projects For MTech, Engineering Students
- 500+ Embedded System Projects For Engineer, Diploma, MTech, PhD
- 500+ Projects For Diploma Electrical, Electronics Student, Diploma Project
- 8051 Microcontroller Timers, TCON Register, TMOD Register
- Advanced Technologies In-Vehicle Infotainment Systems
- Advancements In 3D Printing Technology And It’s Future
- Advancements In Power Electronics For Energy Efficiency
- AI Tools For Electronic Circuit Design, Which Is Best?
- Analog Electronics Interview Questions Most Commonly Asked
- Applications Of IoT, Internet Of Things, What Is IoT, Latest Technology
- Applications Of Microcontrollers, Embedded System Applications
- Automotive Companies And Their Investment In Technology
- Automotive Electronics Interview Questions For Engineers, Automobile
- Automotive Industry Or VLSI Chip Industry ? Which Is Best?
- Autonomous Vehicles: The Future Of Transportation
- Bajaj Freedom 125 CNG: Five Motives To Purchase It
- Best Engineering Branch For Future
- Best Programming Languages For Electrical and Electronics Engineers